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SI2369DS-T1-GE3
Power MOSFET, P Channel, 30 V, 7.6 A, 0.029 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2369DS-T1-GE3Copy
Manufacturer Standard Lead Time21 weeks
Newark Part No.
Re-Reel70AC6498
Cut Tape70AC6498
Your Part Number
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2369DS-T1-GE3Copy
Manufacturer Standard Lead Time21 weeks
Newark Part No.
Re-Reel70AC6498
Cut Tape70AC6498
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.6A
On Resistance Rds(on)0.024ohm
Drain Source On State Resistance0.029ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage10V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI2369DS-T1-GE3 is a P-Channel 30V Power MOSFET with ±20V gate source voltage. It works on Trench MOSFET® technology.
- 100% Rg Tested
- Halogen-free
Applications
Audio, Signal Processing, Industrial
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.024ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
7.6A
Drain Source On State Resistance
0.029ohm
Power Dissipation Pd
2.5W
Transistor Case Style
SOT-23
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate