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SI4101DY-T1-GE3
Power MOSFET, P Channel, 30 V, 25.7 A, 0.006 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4101DY-T1-GE3
Newark Part No.57AJ0436
Product RangeTrenchFET Series
Technical Datasheet
3,445 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.310 |
| 10+ | $1.040 |
| 25+ | $0.944 |
| 50+ | $0.853 |
| 100+ | $0.762 |
| 250+ | $0.702 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$6.55
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4101DY-T1-GE3
Newark Part No.57AJ0436
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id25.7A
Drain Source On State Resistance0.006ohm
On Resistance Rds(on)0.005ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd6W
Power Dissipation6W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.006ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
6W
No. of Pins
8Pins
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
25.7A
On Resistance Rds(on)
0.005ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability