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SI4896DY-T1-GE3
MOSFET, N-CH, 80V, 6.7A, NSOIC-8
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| Quantity | Price |
|---|---|
| 1+ | $2.980 |
| 25+ | $2.540 |
| 100+ | $2.030 |
| 500+ | $1.880 |
| 1000+ | $1.230 |
| 2500+ | $1.220 |
| 5000+ | $1.210 |
| 10000+ | $1.190 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.98
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4896DY-T1-GE3
Newark Part No.81Y9750
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id6.7A
Drain Source On State Resistance0.0165ohm
On Resistance Rds(on)0.0135ohm
Transistor Case StyleNSOIC
Transistor MountingSurface Mount
Power Dissipation Pd1.56W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1.56W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0165ohm
Transistor Case Style
NSOIC
Power Dissipation Pd
1.56W
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
6.7A
On Resistance Rds(on)
0.0135ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.56W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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