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Available to Order
Manufacturer Standard Lead Time: 23 week(s)
Quantity | Price |
---|---|
250+ | $0.628 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$1,570.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4909DY-T1-GE3
Newark Part No.70AC6508
Technical Datasheet
Channel TypeP Channel
Continuous Drain Current Id8A
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Drain Source Voltage Vds40V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.021ohm
Drain Source On State Resistance P Channel0.021ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.2W
Power Dissipation P Channel3.2W
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4909DY-T1-GE3 is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for load switches, notebook and desktop PC applications.
- Halogen-free
- TrenchFET® power MOSFET
- 100% Rg and UIS tested
Applications
Industrial, Computers & Computer Peripherals, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds
40V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
0.021ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.2W
Qualification
-
MSL
-
Continuous Drain Current Id
8A
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.021ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate