Print Page
SI4925DDY-T1-GE3
Dual MOSFET, P Channel, 30 V, 8 A
Image is for illustrative purposes only. Please refer to product description.
2,450 In Stock
Need more?
Same day shipping
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.460 |
| 10+ | $1.030 |
| 25+ | $1.030 |
| 50+ | $0.915 |
| 100+ | $0.802 |
| 250+ | $0.746 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.46
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4925DDY-T1-GE3
Newark Part No.05W6952
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id8A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.024ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel5W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The SI4925DDY-T1-GE3 is a -30V Dual P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 100% UIS Tested
Applications
Power Management, Consumer Electronics, Computers & Computer Peripherals
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
0.024ohm
No. of Pins
8Pins
Power Dissipation P Channel
5W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability