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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4946BEY-T1-E3
Newark Part No.75M3216
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id6.5A
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds60V
Continuous Drain Current Id N Channel6.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.4W
Power Dissipation P Channel-
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4946BEY-T1-E3 is a 60V Dual N-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 175°C Maximum junction temperature
- 100% Rg Tested
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
6.5A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
6.5A
Drain Source On State Resistance N Channel
0.033ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.4W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability