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SI7478DP-T1-GE3
Power MOSFET, N Channel, 60 V, 20 A, 0.0075 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $1.820 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$5,460.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7478DP-T1-GE3
Newark Part No.26R1929
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id20A
On Resistance Rds(on)0.006ohm
Drain Source On State Resistance0.0075ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.9W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max3V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.006ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.9W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
20A
Drain Source On State Resistance
0.0075ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK SO
Power Dissipation
1.9W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate