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SI7812DN-T1-GE3
Power MOSFET, N Channel, 75 V, 16 A, 0.037 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7812DN-T1-GE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Re-Reel26R1935
Cut Tape26R1935
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 37 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $1.360 | $4,080.00 |
| Total Price | $4,080.00 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 3000+ | $1.360 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7812DN-T1-GE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Re-Reel26R1935
Cut Tape26R1935
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id16A
Drain Source On State Resistance0.037ohm
On Resistance Rds(on)0.046ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.8W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max2.3V
Transistor Case StylePowerPAK 1212
Power Dissipation3.8W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI7812DN-T1-GE3 is a 75VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch applications.
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.037ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.046ohm
Power Dissipation Pd
3.8W
Gate Source Threshold Voltage Max
2.3V
Power Dissipation
3.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate