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SI9926CDY-T1-E3
Dual MOSFET, N Channel, 20 V, 8 A, 0.018 ohm
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| Quantity | Price |
|---|---|
| 1+ | $2.230 |
| 10+ | $1.510 |
| 25+ | $1.370 |
| 50+ | $1.230 |
| 100+ | $1.080 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$11.15
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9926CDY-T1-E3
Newark Part No.40P0824
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id8A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.018ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI9926CDY-T1-E3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for DC-to-DC converter application.
- TrenchFET® power MOSFET
- 100% UIS tested
Applications
Industrial, Power Management, Computers & Computer Peripherals
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.018ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability