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SIA456DJ-T1-GE3
Power MOSFET, N Channel, 200 V, 2.6 A, 1.38 ohm, SC-70, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIA456DJ-T1-GE3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.
Full Reel85W0170
Re-Reel03P9742RL
Cut Tape03P9742
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $0.572 | $1,716.00 |
| Total Price | $1,716.00 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.572 |
| 6000+ | $0.561 |
| 9000+ | $0.549 |
| 15000+ | $0.538 |
| 30000+ | $0.527 |
| 75000+ | $0.515 |
| 150000+ | $0.504 |
| 300000+ | $0.492 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.423 |
| 9000+ | $0.414 |
| 15000+ | $0.406 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA456DJ-T1-GE3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.
Full Reel85W0170
Re-Reel03P9742RL
Cut Tape03P9742
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id2.6A
Drain Source On State Resistance1.38ohm
On Resistance Rds(on)3.5ohm
Transistor Case StyleSC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage16V
Power Dissipation Pd3.5W
Gate Source Threshold Voltage Max1.4V
Power Dissipation3.5W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The SIA456DJ-T1-GE3 is a 200VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for boost converter applications.
- New thermally enhanced PowerPAK® package
- Small footprint area
- Low ON-resistance
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.38ohm
Transistor Case Style
SC-70
Rds(on) Test Voltage
16V
Gate Source Threshold Voltage Max
1.4V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
2.6A
On Resistance Rds(on)
3.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.5W
Power Dissipation
3.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (19-Jan-2021)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability