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SIS454DN-T1-GE3
MOSFET,N CH,DIODE,20V,35A,PPAK1212-8
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1,988 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.600 |
| 10+ | $1.160 |
| 25+ | $1.100 |
| 50+ | $1.030 |
| 100+ | $0.950 |
| 500+ | $0.811 |
| 1000+ | $0.763 |
Price for:Each
Minimum: 1
Multiple: 1
$1.60
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS454DN-T1-GE3
Newark Part No.23T8487
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id35A
Drain Source On State Resistance0.0037ohm
On Resistance Rds(on)0.003ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Power Dissipation Pd3.8W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation3.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0037ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation Pd
3.8W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
On Resistance Rds(on)
0.003ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
3.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability