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Quantity | Price |
---|---|
1+ | $0.995 |
10+ | $0.745 |
25+ | $0.682 |
50+ | $0.620 |
100+ | $0.558 |
250+ | $0.530 |
500+ | $0.501 |
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Multiple: 5
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISH625DN-T1-GE3
Newark Part No.99AC9586
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0056ohm
Drain Source On State Resistance0.0056ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd52W
Gate Source Threshold Voltage Max2.5V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0056ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.0056ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
52W
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability