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SQ4917CEY-T1_GE3
MOSFET, DUAL P-CH, 60V, 8A, SO-8 DUAL ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSQ4917CEY-T1_GE3
Newark Part No.62AK0149
Product RangeTrenchFET Series
Technical Datasheet
Packaging Options
3,094 In Stock
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Delivery in 2-4 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $2.320 |
| 10+ | $1.600 |
| 25+ | $1.460 |
| 50+ | $1.330 |
| 100+ | $1.190 |
| 250+ | $1.100 |
| 500+ | $1.010 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.32
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4917CEY-T1_GE3
Newark Part No.62AK0149
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.0421ohm
Drain Source On State Resistance P Channel0.0421ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel5W
Power Dissipation P Channel5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
0.0421ohm
No. of Pins
8Pins
Power Dissipation P Channel
5W
Product Range
TrenchFET Series
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
60V
Continuous Drain Current Id
8A
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.0421ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability