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SQJ940EP-T1_GE3
MOSFET, DUAL N-CH, 40V, 15A, 175DEG C
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13,243 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.060 |
| 10+ | $1.170 |
| 25+ | $1.010 |
| 50+ | $0.805 |
| 100+ | $0.643 |
| 500+ | $0.547 |
Price for:Each
Minimum: 1
Multiple: 1
$2.06
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ940EP-T1_GE3
Newark Part No.19X1984
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id15A
Drain Source Voltage Vds P Channel40V
Drain Source Voltage Vds40V
Continuous Drain Current Id N Channel15A
Continuous Drain Current Id P Channel15A
Drain Source On State Resistance N Channel0.0133ohm
Drain Source On State Resistance P Channel0.0133ohm
Transistor Case StylePowerPAK SO
No. of Pins8Pins
Power Dissipation N Channel48W
Power Dissipation P Channel48W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SQJ940EP-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package.
- Halogen-free
- TrenchFET® power MOSFET
- 100% Rg and UIS tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
15A
Drain Source Voltage Vds
40V
Continuous Drain Current Id P Channel
15A
Drain Source On State Resistance P Channel
0.0133ohm
No. of Pins
8Pins
Power Dissipation P Channel
48W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
15A
Drain Source On State Resistance N Channel
0.0133ohm
Transistor Case Style
PowerPAK SO
Power Dissipation N Channel
48W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability