IRLR2908TRLPBF
MOSFET de Potencia, Canal N, 80 V, 30 A, 0.028 ohm, TO-252AA, Montaje Superficial
Información del producto
Resumen del producto
The IRLR2908TRLPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
- Logic level
Especificaciones técnicas
Canal N
80
0.0225ohm
TO-252 (DPAK)
10
1
3Pines
HEXFET
MSL 1 - Unlimited
N Channel
30
0.028ohm
Surface Mount
120W
120
175
-
To Be Advised
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto