FM28V020-SG

FM28V020-SG is a 256-Kbit (32K × 8) F-RAM memory. It is a non-volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM28V020 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by active-low CE or simply by changing the address. The F-RAM memory is non-volatile due to its unique ferroelectric memory process. These features make the FM28V020 ideal for non-volatile memory applications requiring frequent or rapid writes.

• High-endurance 100 trillion (10^14) read/writes, NoDelay™ writes
• Page mode operation, advanced high-reliability ferroelectric process
• SRAM compatible, industry-standard 32K × 8 SRAM pinout
• 70ns access time, 140ns cycle time
• Superior to battery-backed SRAM modules, no battery concerns, monolithic reliability
• True surface mount solution, no rework steps, superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots
• Low-voltage operation: VDD=2.0V to 3.6V
• Standby current is 90µA typ at VDD=3.6V, active-low CE at VDD
• 28-pin SOIC package, -40°C to +85°C industrial temperature range