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IXFN360N10T
MOSFET MODULE, N-CH, 100V, 360A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN360N10TCopy
Manufacturer Standard Lead Time41 weeks
Newark Part No.37AC0717
Product RangeTrench HiperFET
Your Part Number
485 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $38.280 |
| 5+ | $36.400 |
| 10+ | $34.300 |
| 25+ | $32.000 |
| 50+ | $29.910 |
| 100+ | $29.290 |
| 250+ | $28.450 |
Price for:Each
Minimum: 1
Multiple: 1
$38.28
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN360N10TCopy
Manufacturer Standard Lead Time41 weeks
Newark Part No.37AC0717
Product RangeTrench HiperFET
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id360A
Drain Source Voltage Vds100V
On Resistance Rds(on)0.0026ohm
Drain Source On State Resistance2600µohm
Rds(on) Test Voltage100V
Gate Source Threshold Voltage Max4.5V
Power Dissipation830W
Power Dissipation Pd830W
Operating Temperature Max175°C
Product RangeTrench HiperFET
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
360A
On Resistance Rds(on)
0.0026ohm
Rds(on) Test Voltage
100V
Power Dissipation
830W
Operating Temperature Max
175°C
SVHC
No SVHC (12-Jan-2017)
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
2600µohm
Gate Source Threshold Voltage Max
4.5V
Power Dissipation Pd
830W
Product Range
Trench HiperFET
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate