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2N7002A-7
Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part No2N7002A-7Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel07AH5031
Re-Reel07AH5030RL
Cut Tape07AH5030
Your Part Number
113 In Stock
150,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.320 | $0.32 |
| Total Price | $0.32 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.320 |
| 50+ | $0.143 |
| 100+ | $0.126 |
| 250+ | $0.124 |
| 500+ | $0.121 |
| 1000+ | $0.118 |
| 2500+ | $0.116 |
| 5000+ | $0.113 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.060 |
| 9000+ | $0.052 |
| 15000+ | $0.051 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part No2N7002A-7Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel07AH5031
Re-Reel07AH5030RL
Cut Tape07AH5030
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id180mA
Drain Source On State Resistance6ohm
On Resistance Rds(on)3.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Power Dissipation Pd370mW
Gate Source Threshold Voltage Max2V
Power Dissipation370mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
2N7002A-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications and motor control.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Small surface mount package
- ESD protected gate, 1.2kV HBM, 1kV CDM
- Drain-source voltage is 60V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Pulsed drain current (10µs pulse, duty cycle=1%) is 800mA at TA=+25°C
- Static drain-source on-resistance is 3.5ohm typ at VGS=5.0V, ID=0.115A, TJ=+25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
6ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
5V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
180mA
On Resistance Rds(on)
3.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
370mW
Power Dissipation
370mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability