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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD031N06L3GATMA1
Newark Part No.50Y2019
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id100A
On Resistance Rds(on)0.0025ohm
Drain Source On State Resistance0.0031ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd167W
Gate Source Threshold Voltage Max1.7V
Power Dissipation167W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The IPD031N06L3 G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). It can be used for a broad range of industrial applications including solar micro inverter and fast switching DC-to-DC converter.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Ideal for fast switching applications
- MSL1 rated
- Highest system efficiency
- Increased power density
- Very low voltage overshoot
- Optimized technology for DC-to-DC converters
- Normal level
- 100% Avalanche tested
- Qualified according to JEDEC for target applications
- Green device
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0025ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0031ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
167W
Power Dissipation
167W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate