IRF7341TRPBF
Dual MOSFET, N Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
Product Information
Product Overview
The IRF7341TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
N Channel
4.7A
55V
4.7A
0.043ohm
8Pins
2W
-
MSL 1 - Unlimited
55V
55V
4.7A
0.043ohm
SOIC
2W
150°C
-
No SVHC (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate