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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN24N100
Newark Part No.14J1684
Technical Datasheet
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1+ | $54.530 |
5+ | $51.350 |
10+ | $48.160 |
30+ | $48.160 |
50+ | $48.150 |
100+ | $47.630 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN24N100
Newark Part No.14J1684
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id24A
Drain Source On State Resistance0.39ohm
On Resistance Rds(on)0.39ohm
Transistor Case StyleISOTOP
Transistor MountingModule
Rds(on) Test Voltage10V
Power Dissipation Pd600W
Gate Source Threshold Voltage Max5.5V
Power Dissipation600W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN24N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- miniBLOC with aluminium nitride isolation
- UL94V-0 Flammability rating
- Low RDS (ON) HDMOS™ process
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
Applications
Power Management, Industrial, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
24A
On Resistance Rds(on)
0.39ohm
Transistor Mounting
Module
Power Dissipation Pd
600W
Power Dissipation
600W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
0.39ohm
Transistor Case Style
ISOTOP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability