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IXFN170N65X2
Bipolar (BJT) Single Transistor, N Channel, 170 A, 650 V, 0.013 ohm, 10 V, 5 V
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ManufacturerLITTELFUSE
Manufacturer Part NoIXFN170N65X2
Newark Part No.03AH0724
Product RangeHiPERFET X2 Series
Technical Datasheet
295 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $42.810 |
| 5+ | $42.810 |
| 10+ | $42.810 |
| 25+ | $42.810 |
| 50+ | $42.810 |
| 100+ | $42.810 |
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$42.81
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN170N65X2
Newark Part No.03AH0724
Product RangeHiPERFET X2 Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id170A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.013ohm
On Resistance Rds(on)0.013ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.17kW
Operating Temperature Max150°C
Power Dissipation Pd1.17kW
Product RangeHiPERFET X2 Series
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
170A
Drain Source On State Resistance
0.013ohm
Rds(on) Test Voltage
10V
Power Dissipation
1.17kW
Power Dissipation Pd
1.17kW
SVHC
To Be Advised
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.013ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
150°C
Product Range
HiPERFET X2 Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability