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IXFN90N85X
Bipolar (BJT) Single Transistor, N Channel, 90 A, 850 V, 0.041 ohm, 10 V, 5.5 V
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| Quantity | Price |
|---|---|
| 1+ | $47.350 |
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$47.35
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN90N85X
Newark Part No.29AK0438
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id90A
Drain Source Voltage Vds850V
Drain Source On State Resistance0.041ohm
On Resistance Rds(on)0.041ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation Pd1.2kW
Power Dissipation1.2kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode suitable for use in DC-DC converters, switch-mode and resonant-mode power supplies, AC and DC motor control, robotics and servo controls application.
- X-Class HiPerFET™ power MOSFET
- miniBLOC with aluminium nitride isolation
- Isolation voltage 2500V
- High current handling capability
- Low RDS(on)
- High power density
- Easy to mount
- Space savings
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
90A
Drain Source On State Resistance
0.041ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.2kW
Operating Temperature Max
150°C
SVHC
To Be Advised
Transistor Polarity
N Channel
Drain Source Voltage Vds
850V
On Resistance Rds(on)
0.041ohm
Gate Source Threshold Voltage Max
5.5V
Power Dissipation
1.2kW
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate