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2N7000-G
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
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Product Information
ManufacturerMICROCHIP
Manufacturer Part No2N7000-GCopy
Newark Part No.53Y4360
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id200mA
Drain Source On State Resistance5ohm
On Resistance Rds(on)5ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1W
Power Dissipation Pd1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Product Overview
- 60V, 5ohm, N-channel, enhancement-mode, vertical DMOS FET
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Power Dissipation
1W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
200mA
On Resistance Rds(on)
5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability