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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      TP0606N3-G

                      Power MOSFET, P Channel, 60 V, 320 mA, 3.5 ohm, TO-92, Through Hole

                      Date/Lot Code

                      MICROCHIP TP0606N3-G
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerMICROCHIP
                      Manufacturer Part NoTP0606N3-G
                      Newark Part No.53Y4265
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      2,015 In Stock

                      Need more?

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                      Order before 9pm EST standard shipping
                      Available in quantity shown
                      QuantityPrice
                      1+$0.225
                      10+$0.225
                      25+$0.225
                      50+$0.225
                      100+$0.225
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $0.22
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                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerMICROCHIP
                      Manufacturer Part NoTP0606N3-G
                      Newark Part No.53Y4265
                      Technical Datasheet

                      Data Sheet

                      Channel TypeP Channel
                      Transistor PolarityP Channel
                      Drain Source Voltage Vds60V
                      Continuous Drain Current Id320mA
                      On Resistance Rds(on)3ohm
                      Drain Source On State Resistance3.5ohm
                      Transistor Case StyleTO-92
                      Transistor MountingThrough Hole
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max2.4V
                      Power Dissipation Pd1W
                      Power Dissipation1W
                      No. of Pins3Pins
                      Operating Temperature Max150°C
                      Product Range-
                      Qualification-
                      SVHCNo SVHC (25-Jun-2025)

                      Product Overview

                      This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown

                      • Suitable for logic level interfaces (ideal for TTL and CMOS), solid state relays, battery operated systems, photo voltaic drives, analogue switches etc..
                      • Low threshold (-2.4V max.)
                      • High input impedance
                      • Low input capacitance (80pF typ.)
                      • Fast switching speeds
                      • Low on-resistance
                      • Free from secondary breakdown
                      • Low input and output leakage

                      Technical Specifications

                      Channel Type

                      P Channel

                      Drain Source Voltage Vds

                      60V

                      On Resistance Rds(on)

                      3ohm

                      Transistor Case Style

                      TO-92

                      Rds(on) Test Voltage

                      10V

                      Power Dissipation Pd

                      1W

                      No. of Pins

                      3Pins

                      Product Range

                      -

                      SVHC

                      No SVHC (25-Jun-2025)

                      Transistor Polarity

                      P Channel

                      Continuous Drain Current Id

                      320mA

                      Drain Source On State Resistance

                      3.5ohm

                      Transistor Mounting

                      Through Hole

                      Gate Source Threshold Voltage Max

                      2.4V

                      Power Dissipation

                      1W

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      Technical Docs (2)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (25-Jun-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Product traceability

                      Date/Lot Code

                      Customer Service
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                      Technical 01.800.463.9275
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