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2N5195G.
Bipolar (BJT) Single Transistor, PNP, 80 V, 4 A, 40 W, TO-225, Through Hole
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Available to Order
Delivery estimated post order confirmations.You will be charged on dispatch.
| Quantity | Price |
|---|---|
| 500+ | $0.542 |
| 1000+ | $0.538 |
| 2500+ | $0.530 |
Price for:Each
Minimum: 500
Multiple: 500
$271.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part No2N5195G.Copy
Newark Part No.28AC7842
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
DC Collector Current4A
Continuous Collector Current4A
Power Dissipation40W
Power Dissipation Pd40W
DC Current Gain hFE80hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-225
Transition Frequency2MHz
DC Current Gain hFE Min80hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
80V
Continuous Collector Current
4A
Power Dissipation Pd
40W
Transistor Mounting
Through Hole
Transistor Case Style
TO-225
DC Current Gain hFE Min
80hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
80V
DC Collector Current
4A
Power Dissipation
40W
DC Current Gain hFE
80hFE
No. of Pins
3Pins
Transition Frequency
2MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Alternatives for 2N5195G.
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate