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2N5550TA
Bipolar (BJT) Single Transistor, NPN, 140 V, 600 mA, 1.5 W, TO-92, Through Hole
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N5550TA
Newark Part No.46AC2102
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo140V
Collector Emitter Voltage Max140V
Continuous Collector Current600mA
Power Dissipation Pd1.5W
Power Dissipation1.5W
DC Collector Current600mA
Transistor Case StyleTO-92
Transistor MountingThrough Hole
DC Current Gain hFE20hFE
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min60hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
140V
Power Dissipation Pd
1.5W
DC Collector Current
600mA
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
60hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
140V
Continuous Collector Current
600mA
Power Dissipation
1.5W
Transistor Case Style
TO-92
DC Current Gain hFE
20hFE
Transition Frequency
300MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate