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2N7002KW
Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.416 |
| 10+ | $0.266 |
| 25+ | $0.232 |
| 50+ | $0.198 |
| 100+ | $0.164 |
| 250+ | $0.156 |
| 500+ | $0.147 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
$2.08
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7002KW
Newark Part No.31Y5853
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id310mA
Drain Source On State Resistance1.6ohm
On Resistance Rds(on)1.6ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Power Dissipation Pd300mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation300mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N7002KW is a N-channel enhancement-mode FET with low ON-resistance and low gate threshold voltage.
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Ultra-small surface-mount package
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.6ohm
Transistor Case Style
SOT-323
Power Dissipation Pd
300mW
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
310mA
On Resistance Rds(on)
1.6ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability