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BD139G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1.5 A, 1.25 W, TO-225AA, Through Hole
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| 500+ | $0.422 |
| 1000+ | $0.392 |
| 2500+ | $0.392 |
| 10000+ | $0.366 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD139G
Newark Part No.45J0613
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Collector Emitter Voltage V(br)ceo80V
Continuous Collector Current1.5A
Power Dissipation1.25W
Power Dissipation Pd1.25W
DC Collector Current1.5A
Transistor Case StyleTO-225AA
DC Current Gain hFE40hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BD139G is an NPN Plastic Medium-Power Silicon Transistor designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
- High DC current gain
- Halogen-free
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation
1.25W
DC Collector Current
1.5A
DC Current Gain hFE
40hFE
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Continuous Collector Current
1.5A
Power Dissipation Pd
1.25W
Transistor Case Style
TO-225AA
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for BD139G
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability