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FDC6303N
Dual MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm
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| Quantity | Price |
|---|---|
| 100+ | $6.180 |
| 250+ | $5.540 |
| 500+ | $4.880 |
| 1000+ | $4.400 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$623.00
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Product Information
Product Overview
The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
- 8V Gate-source voltage
- 0.68A Continuous drain/output current
- 2A Pulsed drain/output current
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
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