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FDC638APZ
Power MOSFET, P Channel, 20 V, 4.5 A, 0.043 ohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC638APZCopy
Manufacturer Standard Lead Time37 weeks
Newark Part No.52M3150
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 37 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.297 |
| 9000+ | $0.279 |
| 15000+ | $0.273 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$891.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC638APZCopy
Manufacturer Standard Lead Time37 weeks
Newark Part No.52M3150
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.043ohm
On Resistance Rds(on)0.037ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage12V
Power Dissipation Pd1.6W
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max800mV
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC638APZ is a 2.5V specified P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
- High performance Trench technology for extremely low RDS (ON)
- 8nC typical low gate charge
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.043ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
800mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.037ohm
Rds(on) Test Voltage
12V
Transistor Case Style
SuperSOT
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for FDC638APZ
3 Products Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate