Print Page
FDS9431A
Power MOSFET, P Channel, 20 V, 3.5 A, 0.13 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS9431ACopy
Manufacturer Standard Lead Time16 weeks
Newark Part No.38C7184
Your Part Number
4 In Stock
Need more?
FREE Standard Delivery
on orders over $150
| Quantity | Price |
|---|---|
| 1+ | $1.330 |
| 50+ | $0.687 |
| 100+ | $0.624 |
| 250+ | $0.569 |
| 500+ | $0.514 |
| 1000+ | $0.504 |
| 2500+ | $0.494 |
| 5000+ | $0.483 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.33
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS9431ACopy
Manufacturer Standard Lead Time16 weeks
Newark Part No.38C7184
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.5A
Drain Source On State Resistance0.13ohm
On Resistance Rds(on)0.13ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage4.5V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max600mV
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS9431A is a 2.5V specified P-channel MOSFET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It is suitable for DC-to-DC converter, load switch and battery protection.
- Fast switching speed
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
600mV
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
3.5A
On Resistance Rds(on)
0.13ohm
Power Dissipation Pd
2.5W
Transistor Case Style
SOIC
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability