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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE3055TG
Newark Part No.45J1504
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Collector Emitter Voltage V(br)ceo60V
Continuous Collector Current10A
Power Dissipation75W
Power Dissipation Pd75W
DC Collector Current10A
Transistor Case StyleTO-220
DC Current Gain hFE2hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min2hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead
Product Overview
The MJE3055TG is a 60V NPN complementary plastic silicon Bipolar Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
- DC current gain specified to 10A
- High current gain - bandwidth
- 70VDC Collector to base voltage (VCBO)
- 5V Emitter to base voltage (VEBO)
- 6ADC Base current (IB)
- 1.67°C/W Thermal resistance, junction to case
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation
75W
DC Collector Current
10A
DC Current Gain hFE
2hFE
No. of Pins
3Pins
DC Current Gain hFE Min
2hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Continuous Collector Current
10A
Power Dissipation Pd
75W
Transistor Case Style
TO-220
Transistor Mounting
Through Hole
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (2)
Alternatives for MJE3055TG
2 Products Found
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability