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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM200GB125D
Newark Part No.55X3194
Technical Datasheet
IGBT ConfigurationHalf Bridge
DC Collector Current200A
Continuous Collector Current200A
Collector Emitter Saturation Voltage3.3V
Collector Emitter Saturation Voltage Vce(on)3.3V
Power Dissipation-
Power Dissipation Pd-
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
Product Overview
The SKM200GB125D is a SEMITRANS® 3 ultrafast IGBT Module for use with inductive heating and resonant inverters up to 100kHz. It features isolated copper base plate using DCB (Direct Copper Bonding) technology and short tail current with low temperature dependence.
- Half-bridge switch
- N channel, homogeneous Si
- Low inductance case
- High short-circuit capability, self limiting to 6 x IC
- Fast and soft inverse CAL diodes
- Large clearance (13mm) and creepage distance (20mm)
Technical Specifications
IGBT Configuration
Half Bridge
Continuous Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
3.3V
Power Dissipation Pd
-
Operating Temperature Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
DC Collector Current
200A
Collector Emitter Saturation Voltage
3.3V
Power Dissipation
-
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate