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SCTW40N120G2VAG
Silicon Carbide MOSFET, Single, N Channel, 33 A, 1.2 kV, 0.075 ohm, TO-247
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTW40N120G2VAG
Newark Part No.69AH2146
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $26.380 |
| 10+ | $26.090 |
| 25+ | $20.400 |
| 60+ | $19.700 |
| 120+ | $19.240 |
Price for:Each
Minimum: 1
Multiple: 1
$26.38
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTW40N120G2VAG
Newark Part No.69AH2146
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id33A
On Resistance Rds(on)0.075ohm
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.075ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.2V
Power Dissipation Pd290W
Power Dissipation290W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
On Resistance Rds(on)
0.075ohm
Drain Source On State Resistance
0.075ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
3.2V
Power Dissipation
290W
Product Range
-
MOSFET Module Configuration
Single
Continuous Drain Current Id
33A
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation Pd
290W
Operating Temperature Max
200°C
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate