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TBD62083AFNG(Z,EL)
DMOS Transistor Array, 8 Output, 500 mA/50V Out, -40 to 85°C, SSOP-18
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoTBD62083AFNG(Z,EL)Copy
Newark Part No.74AK2913RL
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTBD62083AFNG(Z,EL)Copy
Newark Part No.74AK2913RL
Technical Datasheet
Product Overview
TBD62083AFNG(Z,EL) is a TBD62083A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.
- 8 channel sink type DMOS transistor array
- High voltage is 50V (max, Ta = 25°C), high current is 500mA/ch (max, Ta = 25°C)
- Input voltage range from 2.5 to 25V (output on, IOUT = 100mA or upper, VOUT = 2V, Ta = −40 to 85°C)
- COMMON pin voltage is 50V (max, Ta = -40 to 85°C)
- Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
- Output leakage current is 1.0μA (max, VOUT = 50V, Ta = 85°C, VIN = 0V)
- Turn on delay is 0.4μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- Turn off delay is 0.8μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- SSOP18-P-225-0.65 package, operating temperature range from -40 to 85°C
Notes
Please be careful about thermal conditions during use.
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
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Product Compliance Certificate