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TTC004B,Q(S
Bipolar (BJT) Single Transistor, NPN, 160 V, 1.5 A, 10 W, TO-126N, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $0.704 |
| 10+ | $0.583 |
| 100+ | $0.428 |
| 500+ | $0.384 |
| 1000+ | $0.347 |
| 2500+ | $0.302 |
| 10000+ | $0.296 |
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Multiple: 1
$0.70
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTTC004B,Q(S
Newark Part No.08AK7553
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Collector Emitter Voltage V(br)ceo160V
DC Collector Current1.5A
Continuous Collector Current1.5A
Power Dissipation10W
Power Dissipation Pd10W
Transistor Case StyleTO-126N
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE140hFE
DC Current Gain hFE Min140hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
160V
Continuous Collector Current
1.5A
Power Dissipation Pd
10W
Transistor Mounting
Through Hole
Transition Frequency
100MHz
DC Current Gain hFE Min
140hFE
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage Max
160V
DC Collector Current
1.5A
Power Dissipation
10W
Transistor Case Style
TO-126N
No. of Pins
3Pins
DC Current Gain hFE
140hFE
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability