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SI1013R-T1-GE3
Power MOSFET, P Channel, 20 V, 350 mA, 1.2 ohm, SOT-416, Surface Mount
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1013R-T1-GE3Copy
Newark Part No.69W7169
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id350mA
On Resistance Rds(on)1.8ohm
Drain Source On State Resistance1.2ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage1.8V
Power Dissipation Pd150mW
Transistor Case StyleSOT-416
Gate Source Threshold Voltage Max800mV
Power Dissipation150mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.8ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
150mW
Gate Source Threshold Voltage Max
800mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
350mA
Drain Source On State Resistance
1.2ohm
Rds(on) Test Voltage
1.8V
Transistor Case Style
SOT-416
Power Dissipation
150mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate