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SI1469DH-T1-E3
Power MOSFET, P Channel, 20 V, 1.6 A, 0.08 ohm, SOT-323, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI1469DH-T1-E3Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel69W7178RL
Cut Tape69W7178
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1469DH-T1-E3Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel69W7178RL
Cut Tape69W7178
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.6A
On Resistance Rds(on)0.065ohm
Drain Source On State Resistance0.08ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.78W
Gate Source Threshold Voltage Max1.5V
Transistor Case StyleSOT-323
Power Dissipation2.78W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI1469DH-T1-E3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.065ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.78W
Transistor Case Style
SOT-323
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
1.6A
Drain Source On State Resistance
0.08ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
2.78W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate