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SI2301BDS-T1-GE3
Power MOSFET, P Channel, 20 V, 2.2 A, 0.1 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.194 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$582.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301BDS-T1-GE3
Newark Part No.84R8020
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.2A
On Resistance Rds(on)0.08ohm
Drain Source On State Resistance0.1ohm
Transistor MountingSurface Mount
Power Dissipation Pd700mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max950mV
Transistor Case StyleSOT-23
Power Dissipation700mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.08ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
2.2A
Drain Source On State Resistance
0.1ohm
Power Dissipation Pd
700mW
Gate Source Threshold Voltage Max
950mV
Power Dissipation
700mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate