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SI5459DU-T1-GE3
Power MOSFET, P Channel, 20 V, 8 A, 0.052 ohm, PowerPAK, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 38 week(s)
| Quantity | Price |
|---|---|
| 500+ | $0.325 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$975.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5459DU-T1-GE3
Newark Part No.35R6243
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id8A
On Resistance Rds(on)0.052ohm
Drain Source On State Resistance0.052ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.5W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.4V
Transistor Case StylePowerPAK
Power Dissipation3.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.052ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
0.052ohm
Power Dissipation Pd
3.5W
Gate Source Threshold Voltage Max
1.4V
Power Dissipation
3.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate