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| Quantity | Price |
|---|---|
| 1+ | $0.657 |
| 10+ | $0.509 |
| 25+ | $0.469 |
| 50+ | $0.427 |
| 100+ | $0.387 |
| 250+ | $0.351 |
| 500+ | $0.315 |
| 1000+ | $0.278 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.28
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI8817DB-T2-E1
Newark Part No.57AJ0479
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.9A
On Resistance Rds(on)0.061ohm
Drain Source On State Resistance0.061ohm
Transistor Case StyleMICRO FOOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation Pd900mW
Power Dissipation900mW
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.061ohm
Transistor Case Style
MICRO FOOT
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
900mW
No. of Pins
4Pins
Product Range
TrenchFET
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Continuous Drain Current Id
2.9A
Drain Source On State Resistance
0.061ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation
900mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability