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SQ4284EY-T1_BE3
Dual MOSFET, N Channel, 40 V, 8 A, 0.0112 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ4284EY-T1_BE3
Newark Part No.80AH8976
Product RangeTrenchFET Series
Technical Datasheet
2,470 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.282 |
| 10+ | $0.282 |
| 25+ | $0.282 |
| 50+ | $0.282 |
| 100+ | $0.282 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4284EY-T1_BE3
Newark Part No.80AH8976
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.0112ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.9W
Power Dissipation P Channel-
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCLead
Product Overview
Notes
BE3 suffix indicates non China production - not subject to US import tariffs
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
TrenchFET Series
SVHC
Lead
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
8A
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.0112ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.9W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability