IDL10G65C5XUMA2

IDL10G65C5XUMA2 is a 5th generation thinQ!™ Schottky barrier diode. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families this ensures meeting the most stringent application requirements in this voltage range. Application includes switch mode power supply, power factor correction, solar inverter, uninterruptible power supply.

• Revolutionary semiconductor material silicon carbide, benchmark switching behavior
• No reverse recovery/ No forward recovery, temperature independent switching behavior
• High surge current capability, qualified according to JEDEC for target applications
• Breakdown voltage tested at 22mA
• Optimized for high temperature operation
• System efficiency improvement over Si diodes, reduced EMI
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures
• PG-VSON-4 package, operating junction temperature range from -40 to 150°C