IMDQ65R020M2HXUMA1
MOSFET de carburo de silicio, Sencillo, Canal N, 97 A, 650 V, 0.018 ohm, HDSOP
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| Tipo de paquete | Cantidad | Precio unitario: | Total (Dólares USD) |
|---|---|---|---|
| Cinta adhesiva | 1 | $13.360 | $13.36 |
| Total (Dólares USD) Precio en USD | $13.36 | ||
| Cantidad | Precio en USD |
|---|---|
| 1+ | $13.360 |
| 50+ | $9.790 |
| 100+ | $9.010 |
| 250+ | $8.960 |
| 500+ | $8.660 |
| 1000+ | $8.360 |
| 2500+ | $8.190 |
| 5000+ | $8.020 |
Información del producto
Resumen del producto
IMDQ65R020M2HXUMA1 is a CoolSiC™ MOSFET 650V Generation 2 (G2) (G2) in Q-DPAK package. It utilizes the G2 superior switching performance, which also provides advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density. Typical applications include SMPS, solar PV inverters, energy storage and battery formation, UPS, EV charging infrastructure and motor drives.
- 20mohm RDs(on) typical
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn‑on even with 0V turn‑off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best‑in‑class thermal performance
- Enables high efficiency and high power density designs
Especificaciones técnicas
Sencillo
97
0.018
22Pines
5.6
175
MSL 3 - 168 hours
Canal N
650
HDSOP
20
394
CoolSiC G2 Series
No SVHC (25-Jun-2025)
Documentos técnicos (1)
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto