DN3545N8-G
MOSFET de Potencia, Modo de Agotamiento, Canal N, 450 V, 200 mA, 20 ohm, SOT-89
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| Cantidad | Precio en USD |
|---|---|
| 1+ | $0.898 |
| 10+ | $0.893 |
| 25+ | $0.829 |
Información del producto
Resumen del producto
The DN3545N8-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high input impedance and positive temperature coefficient inherent in MOS device. Characteristic of all MOS structure, this device is free from thermal runaway and thermally-induced secondary breakdown. The normally-on DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speed are desired.
- Low ON-resistance
- Free from secondary breakdown
- Low input and output leakage
Especificaciones técnicas
Canal N
450
20
SOT-89
0
-
3Pines
-
MSL 1 - Unlimited
Canal N
200
20ohm
Montaje Superficial
1.6W
1.6
150
-
No SVHC (25-Jun-2025)
Documentos técnicos (2)
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto