FDD86110
MOSFET de Potencia, Canal N, 100 V, 50 A, 0.0102 ohm, TO-252 (DPAK), Montaje Superficial
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| Tipo de paquete | Cantidad | Precio unitario: | Total (Dólares USD) |
|---|---|---|---|
| Cinta adhesiva | 5 | $4.200 | $21.00 |
| Total (Dólares USD) Precio en USD | $21.00 | ||
| Cantidad | Precio en USD |
|---|---|
| 5+ | $4.200 |
| 10+ | $2.750 |
| 25+ | $2.470 |
| 50+ | $2.190 |
| 100+ | $1.910 |
| 250+ | $1.740 |
| 500+ | $1.560 |
Información del producto
Resumen del producto
The FDD86110 is a 100V N-channel shielded gate PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Shielded gate MOSFET technology
- 100% UIL tested
Especificaciones técnicas
Canal N
100
0.0085ohm
TO-252 (DPAK)
10
2.8
3Pines
-
MSL 1 - Unlimited
N Channel
50
0.0102
Surface Mount
127W
127
150
-
Lead (25-Jun-2025)
Documentos técnicos (3)
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RoHS
RoHS
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