SCT50N120

SCT50N120 is a silicon carbide power MOSFET produced by exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. This feature renders the device perfectly suitable for high-efficiency and high power-density applications. Application includes solar inverters, UPS, motor drives, high voltage DC-DC converters, and switch mode power supplies.

• Very tight variation of on-resistance vs. temperature
• Very high operating junction temperature capability (TJ = 200°C)
• Very fast and robust intrinsic body diode
• Low capacitance
• Zero gate voltage drain current is 1µA (typ, VDS = 1200V, VGS = 0V, TCASE = 25°C)
• Gate threshold voltage is 3.0V (typ, VDS = VGS, ID = 1mA, TCASE = 25°C)
• Input capacitance is 1900pF (typ, VDS = 400V, f = 1MHz, VGS = 0V)
• Total gate charge is 122nC (typ, VDD = 800V, ID = 40A, VGS = 0 to 20V)
• Gate input resistance is 1.9ohm (typ, f=1MHz open drain)
• HiP247™ package, operating junction temperature range from -55 to 200°C