120mA Single Bipolar Junction Transistors - BJT | Newark Electronics Mexico

Find a huge range of 120mA Single Bipolar Junction Transistors - BJT at Newark Electronics Mexico. We stock a wide range of Single Bipolar Junction Transistors - BJT, such as 100mA, 1A, 500mA & 3A Single Bipolar Junction Transistors - BJT from the worlds top manufacturers including: Rohm

Filter(s) Applied

Continuous Collector Current

:

120mA

1 Filter(s) Selected

Compare					Price for		Quantity

	BC846BHZGT116	68AH8981 Data Sheet RoHS Date/Lot Code	ROHM Bipolar (BJT) Single Transistor NPN 65 V 120 mA 200 mW SOT-23 Surface Mount		Each (Supplied on Cut Tape) Cut Tape Re-Reel Full Reel available	1+ $0.334 10+ $0.202 25+ $0.177 50+ $0.152 100+ $0.127 More Pricing...	Min: 5 / Mult: 5 Min: 500 / Mult: 5	NPN	65V	65V	120mA	200mW	120mA	200mW	SOT-23	Surface Mount	200hFE	3Pins	300MHz	200hFE	150°C	AEC-Q101	AEC-Q101
	BC846BHZGT116	86AK4348 RoHS Date/Lot Code	ROHM TRANSISTOR NPN 65V 0.12A SOT-23 ROHS COMPLIANT: YES		Each (Supplied on Full Reel) Full Reel	3000+ $0.066 6000+ $0.062 12000+ $0.059 18000+ $0.055 30000+ $0.050	Min: 3000 / Mult: 3000	NPN	-	65V	120mA	200mW	-	-	SOT-23	Surface Mount	-	3Pins	300MHz	200hFE	150°C	AEC-Q101	-

Items per page:

1-2 of 2 items

of 1 page(s)

Popular Suppliers

NEXPERIA

ONSEMI

VISHAY

STMICROELECTRONICS

MULTICOMP PRO

INFINEON

NXP

ROHM

New Semiconductors - Discretes

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

NEXPERIA

New onsemi 650v SiC MOSFETs

New onsemi 650v SiC MOSFETs

ONSEMI

MAT14ARZ Bipolar Transistor Array

MAT14ARZ Bipolar Transistor Array

ANALOG DEVICES

TK095N65Z5 650V N-channel power MOSFETs

TK095N65Z5 650V N-channel power MOSFETs

TOSHIBA

600V Gallium Nitride Transistor

600V Gallium Nitride (GaN) Transistor

INFINEON

600 V, 30 A Trench field-stop IGBT

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA

XPT series IGBT Thin-wafer Technolog

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.

LITTELFUSE

MPS Series SiC Schottky Diodes

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

N-Channel Power MOSFET

N-Channel Power MOSFET

INFINEON

650 V, Gallium Nitride (GaN) FET

650 V, Gallium Nitride (GaN) FET

NEXPERIA

H-Bridge in APM16 Series

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

ONSEMI

Silicon-carbide (SiC) N-Channel Power MOSFET

Silicon-carbide (SiC) N-Channel Power MOSFET

MICROCHIP

SIC Mosfet Module, 900V, 149A

SIC Mosfet Module, 900V, 149A

ONSEMI

onsemi EliteSiC

onsemi EliteSiC - 650V to 1700V - Now in stock

ONSEMI

High Speed Trr Series

Low Noise PrestoMOS™ - High Speed Trr Series

ROHM

IGBT 650V Field Stop Trench Technology

IGBT 650V Field Stop Trench Technology

ONSEMI