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FDV305N
Power MOSFET, N Channel, 20 V, 900 mA, 0.22 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV305N
Newark Part No.82C2601
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id900mA
On Resistance Rds(on)0.22ohm
Drain Source On State Resistance0.22ohm
Transistor MountingSurface Mount
Power Dissipation Pd350mW
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max1V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDV305N is a N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for load switch and battery protection applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.22ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
900mA
Drain Source On State Resistance
0.22ohm
Power Dissipation Pd
350mW
Transistor Case Style
SOT-23
Power Dissipation
350mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability